Innovative Pulsing Technique to estimate junction temperature in Wide-bandgap devices
Navy SBIR FY2008.2


Sol No.: Navy SBIR FY2008.2
Topic No.: N08-164
Topic Title: Innovative Pulsing Technique to estimate junction temperature in Wide-bandgap devices
Proposal No.: N082-164-0537
Firm: Accel-RF Corporation
11870 Community Road
Poway, California 92064
Contact: Roland Shaw
Phone: (858) 332-0707
Web Site: www.accelrf.com
Abstract: A simple and reliable method to estimate the channel temperature of GaN high electron mobility transistors (HEMT) is proposed. The technique is based on electrical measurements of performance related figures of merit (IDmax and RON) with a synchronized pulsed I-V setup. As our technique involves only electrical measurement, no special design in device geometry is required and packaged devices can be measured.
Benefits: This technique can be built into commercially available reliability test equipment to improve reliability testing by greatly improving the estimation of the most important parameter of device reliability, component junction temperature. With an established customer base and established sales and marketing functions, Accel-RF is in an excellent position to proliferate the use of this technique to greatly improve state-of-the-art reliability testing and prediction.

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