Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic Integrated Circuits Navy SBIR FY2012.1 Sol No.: Navy SBIR FY2012.1 Topic No.: N121-001 Topic Title: Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic Integrated Circuits Proposal No.: N121-001-0874 Firm: Sundew Technologies, LLC 3400 Industrial Lane Unit 7 Broomfield, Colorado 80020 Contact: Ofer Sneh Phone: (303) 466-2341 Web Site: www.sundewtech.com Abstract: This Phase I proposal targets the development of commercially viable silicon-nitride (SiN) Atomic Layer Deposition (ALD) process for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, this project objective is to provide a higher quality substitution for SiN passivation layers, currently grown by Plasma Enhanced Chemical Vapor Deposition (PECVD). These better passivation layers will enable the development and manufacturing of GaN MMICs with ground-breaking impact on performance, power efficiency, size and cost of many military systems and commercial products. Benefits: SiN ALD holds a key to accelerated commercialization of GaN for millimeter-wave and high power applications. Improving the quality of the passivation layers will allow increase in the electric field, power efficiency and reduction of chip size. Hence, successful development of a high quality SiN ALD manufacturing process will help unleash the promise of GaN to revolutionize many military and commercial systems and offer vastly improved cost, size, weight, power and efficiency compared to GaAs. Military applications, advanced communication, EW and radar systems such as active phased-array radar systems will particularly benefit from this advancement. Commercial markets expected to adopt the higher performing chips are automotive, solar, motor-control and high-performance power supplies. Return