High Voltage Metal Insulator Metal (MIM) Capacitor Technology Navy SBIR FY2012.1 Sol No.: Navy SBIR FY2012.1 Topic No.: N121-071 Topic Title: High Voltage Metal Insulator Metal (MIM) Capacitor Technology Proposal No.: N121-071-1041 Firm: Sundew Technologies, LLC 3400 Industrial Lane Unit 7 Broomfield, Colorado 80020 Contact: Ofer Sneh Phone: (303) 466-2341 Web Site: www.sundewtech.com Abstract: This proposal targets the development of commercially viable Atomic Layer Deposition (ALD) process for the manufacturing of high voltage metal-insulator-metal (MIM) capacitors for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, this project objective is to provide a higher dielectric constant substitution for currently used dielectric layers, integrated with metal electrodes. Higher voltage capacitors will enable the development and manufacturing of GaN MMICs with ground-breaking impact on performance, power efficiency, size and cost of many military systems and commercial products. Benefits: High-k dielectric ALD holds a key to accelerated commercialization of GaN microwave power amplifiers. When combined with area enhancement techniques, both higher-k dielectrics and area enhancement could provide a much needed 5x boost of capacitance density to enable reliable 50 V operation and reverse the trend of capacitor area increase. Hence, successful development of a high quality high-k ALD manufacturing process will help unleash the promise of GaN MMICs to revolutionize many military and commercial systems and offer greatly improved cost, size, weight, power and efficiency compared to GaAs. Military radar and advanced communication systems will particularly benefit from this advancement. Commercial markets expected to adopt the higher performing chips are cell-phones, wireless communication and commercial radars for the automotive and aerospace markets. Return