Planar, Low Switching Loss, Gallium Nitride Devices for Power Conversion Applications Navy SBIR FY2012.1 Sol No.: Navy SBIR FY2012.1 Topic No.: N121-090 Topic Title: Planar, Low Switching Loss, Gallium Nitride Devices for Power Conversion Applications Proposal No.: N121-090-1138 Firm: Cambridge Electronics, Inc. 22 Centre St. Unit 4 Cambridge, Massachusetts 02139 Contact: Tomas Palacios Phone: (617) 710-7013 Abstract: Cambridge Electronics will develop a new generation of power electronic switches based on gallium nitride (GaN) semiconductors. These switches will be optimized for 1000-V operation and switching frequencies in excess of 1 MHz. To maximize the device performance, this project will demonstrate a new fabrication technology that significantly increases the breakdown voltage of GaN transistors and reduces their leakage current and on resistance. The threshold voltage of these devices will be in excess of 1 V. Benefits: The devices and technologies developed in this project have numerous military and commercial applications. For example, they are the main building block for more efficient hybrid and electric vehicles. They could also enable a new generation of photovoltaic inverters operating at higher frequencies and higher levels of reliability. Return