Planar, Low Switching Loss Bulk InAlN/GaN Based HEMTS for Power Conversion Applications Navy SBIR FY2012.1 Sol No.: Navy SBIR FY2012.1 Topic No.: N121-090 Topic Title: Planar, Low Switching Loss Bulk InAlN/GaN Based HEMTS for Power Conversion Applications Proposal No.: N121-090-0808 Firm: Kyma Technologies, Inc. 8829 Midway West Road Raleigh, North Carolina 27617-4606 Contact: Jacob Leach Phone: (919) 789-8880 Web Site: www.kymatech.com Abstract: In this proposal, we build on demonstrated expertise in Bulk GaN growth (Kyma Technologies), Design and simulation of Power Devices and systems (NextWatt LLC), Epitaxial Growth of High Performance HEMT heterostructures (Virginia Commonwealth University), and Fabrication of Advanced Semiconductor Devices (The Pennsylvania State University). The effort aims to develop a high power normally-off HEMT based on InAlN/GaN epilayers grown on bulk GaN substrates. The work naturally stems from proven efforts in the realm of high performance RF FETs already developed by prior and ongoing collaborations within the team. This effort will build on the high quality materials and advanced device performances already demonstrated from previous works and apply them for use in power HEMT devices. The unique capabilities of the team and existing collaborative efforts make the team well positioned to successfully achieve normally-off high power switching HEMTs with VT>1V, VBR>1000V, RON<20A��?zA�-mm and low gate and drain leakage values of <1A,A�A/mm. Benefits: Efficient power conversion and power conditioning devices significantly impact the mission capability and affordability of both the shipboard and airborne platforms through capacity considerations, generation cost, and size and weight-form factors. This work will increase the availability of high performance, high power HEMTs for high frequency switching applications. Return