High Voltage Metal Insulator Metal (MIM) Capacitor Technology Navy SBIR FY2012.1 Sol No.: Navy SBIR FY2012.1 Topic No.: N121-071 Topic Title: High Voltage Metal Insulator Metal (MIM) Capacitor Technology Proposal No.: N121-071-1268 Firm: Acree Technologies Incorporated 1980 Olivera Ave Suite D Concord, California 94520-5454 Contact: Jeff Brown Phone: (925) 798-5770 Web Site: www.acreetech.com Abstract: This purpose of this project is to develop high-k dielectrics and processes suitable for use in Metal-Insulator-Metal capacitors for incorporation into GaN Monolithic Microwave Integrated Circuits. An energetic deposition process will be used that has been demonstrated to produce high quality, high-k films ideally suited for this application. The proposed deposition process is superior to other Physical Vapor Deposition (PVD) processes and to Atomic Layer Deposition. This deposition process allows virtually any arbitrary metal oxide to be easily deposited with high quality allowing different high-k dielectrics to be straightforwardly evaluated. The coatings have high adhesion, are pin-hole and defect free, and contain no impurities from the deposition process. Acree Technologies Incorporated's experience in the development of innovative coating processes makes us uniquely suited for the successful realization of the desired film, process and equipment for integration into existing foundries. Benefits: Current Monolithic Microwave Integrated Circuits designed on GaN substrates are strongly affected by the ability to easily incorporate the necessary capacitance for device function. This affects yield, cost and device size. The introduction of high-k dielectrics provides a pathway forward to improve device performance, reduce cost and also size. This will directly benefit the modern warfighter with improved microwave devices for radar and communications. Return