High-Power Semiconductor Laser in the 3.0- to 3.5-um Spectral Range Navy STTR FY2012.A Sol No.: Navy STTR FY2012.A Topic No.: N12A-T003 Topic Title: High-Power Semiconductor Laser in the 3.0- to 3.5-um Spectral Range Proposal No.: N12A-003-0193 Firm: sdPhotonics LLC 450 South Lake Jessup Avenue Oviedo, Florida 32765-9575 Contact: Guowei Zhao Phone: (321) 274-7596 Abstract: High quality laser materials based on InP, InGaAs, InAlGaAs, and InAs are proposed to develope high power 3 to 3.5 �m diode lasers. An adiabatically broadened amplifying section is proposed to reach high power with high beam quality. The active material uses strained layer epitaxy to rely only on high quality laser materials that can be grown by molecular beam epitaxy, and with high quality on InP substrates. Highly strained active layer can lead to rapid commercial production because of compatibility with existing military suppliers of diode laser epitaxy. Benefits: The 3 to 3.5 �m materials have so far required antimonide materials that can be difficult to control and have some limitations in valence band structure for high diode laser performance. Al is also required in the antimonide waveguide to adjust bandstructure. The new materials proposed have produced high power commercial laser diodes at other wavelengths, and with very high performance. Applying the same techniques as for these shorter wavelengths, we propose to develop the 3 to 3.5 �m diode lasers enabling rapid commercialization for a range of military and industrial applications. Return