More Efficient GaN - SiGe based MMICs for Communication and Radar Systems Navy STTR FY2014.A Sol No.: Navy STTR FY2014.A Topic No.: N14A-T007 Topic Title: More Efficient GaN - SiGe based MMICs for Communication and Radar Systems Proposal No.: N14A-007-0320 Firm: Episensors, Inc. 590 Territorial Drive Suite H Bolingbrook, Illinois 60440-3542 Contact: Hari Vemuri Phone: (630) 226-0080 Web Site: http://www.episensors.us/ Abstract: Active Electronic Scanned Array (AESA) radars play a strategic role in surveillance and reconnaissance. A GaN based T/R circuit will be radiation-hard but difficult to integrate with the remainder of the signal chain due to incompatible technologies. SiGe HBT technology, with its high frequency performance and the ability to blend in with CMOS, can act as a bridge between the high frequency III-V based front-end and the CMOS digital processing and control unit. This will also enable module-level digitization using on-chip SiGe-based analog to digital convertors, thereby improving the signal to noise ratio. A hybrid approach that utilizes the robustness of GaN technologies and the CMOS compatibility of SiGe technology is an enabling solution to existing challenges faced in phased array radar receiver designs. Episensors, Inc. in collaboration with University of Illinois at Chicago proposes to develop a GaN-based low noise amplifier and SiGe phased array radar receiver that operates in the C-band. In Phase I of the proposed effort, the major subcircuits of the receiver will be designed. The receiver module will also house an analog to digital convertor based on the SiGe process. In Phase II, we will design, fabricate, characterize, and optimize the receiver circuit. Benefits: The proposed circuit design and fabrication technologies could open the doors to many commercial applications ranging from phased array radars to communications. The commercial market for these systems is consumer-driven and has stringent cost restrictions. Research and development on low noise, low power and high operating frequency transistor technologies will lead to low noise, wide bandwidth systems that can be realized using these technologies. Next generation communication devices like cell phones, high speed internet and GPS receivers will have lower costs and performance far superior to current generation ones. Return