W-band GaN IMPATT Devices
Navy SBIR FY2015.2
Sol No.: |
Navy SBIR FY2015.2 |
Topic No.: |
N152-114 |
Topic Title: |
W-band GaN IMPATT Devices |
Proposal No.: |
N152-114-0033 |
Firm: |
QuinStar Technology, Inc. 24085 Garnier Street
Torrance, California 90505 |
Contact: |
John Kuno |
Phone: |
(310) 320-1111 |
Abstract: |
QuinStar Technology, Inc. proposes to develop a GaN IMPATT (IMPact-ionization Avalanche Transit Time) device operating at W-band for power generation applications. The approach is based on advanced material development of low defect GaN vertical structures, comprehensive device modeling and optimization, and state-of-the-art fabrication and packaging techniques, supported by a strong team and commercialization strategy. |
Benefits: |
Navy: EW and radar (seeker) applications such as NEMESIS, AARGM programs; Other DoD: Tube replacement and legacy transmitter element replacement such as MILSTAR SATCOM applications; Commercial/Industrial: NASA remote sensing sources for MMW and THz frequencies, NASA MMW deep space communications, weather/security/surveillance radars, THz noise sources. |
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