Development of high-power near-UV semiconductor laser diodes Navy SBIR FY2016.1 Sol No.: Navy SBIR FY2016.1 Topic No.: N161-005 Topic Title: Development of high-power near-UV semiconductor laser diodes Proposal No.: N161-005-0620 Firm: Adroit Materials 3001 Greyhawk Pl Apex, North Carolina 27539 Contact: Ronny Kirste Phone: (919) 515-8637 Web Site: http://www.adroitmaterials.com Abstract: The overall objective of the proposed work is to demonstrate the feasibility of electrically pumped, high-efficiency and long-lifetime, near-UV, solid-state laser diodes (LDs) based on AlGaN MQWs grown on native, single crystalline GaN substrates. The targeted laser diodes will emit between 330 - 350 nm with an emission power exceeding 1 W. These lasers will find application in remote Raman spectroscopy applications, non-line of sight communication systems, and laser identification and detection systems. We will use n-type GaN substrates in order to achieve the first vertical AlGaN laser diode emitting in the UV. This configuration will enable more homogenous current injection, higher achievable pumping power, better thermal management, and, as a direct consequence, high output power. Benefits: The development of AlGaN-based UV lasers is expected to have an impact on both military and commercial optoelectronics, and is therefore considered an essential innovation in the field of photonics. Miniaturized, efficient UV laser sources will enable covert, short-range communication systems, as well as portable detection systems of biological agents. In the commercial domain, highest-density UV optical storage systems will enable the fourth generation of read-write systems following near-infrared CD-ROM (780 nm), red DVD (650 nm) and the latest blue/violet (405 nm) norms (Blu-Ray). Return