TECHNOLOGY AREAS: Air Platform, Information Systems, Sensors, Electronics

ACQUISITION PROGRAM: PMA-265 F/A-18 Hornet ACAT I

OBJECTIVE: Develop new innovative broadband gallium nitride (GaN)-based radio frequency (RF) power discrete or microwave monolithic integrated circuit (MMIC) solutions capable of 35-40 watts output power over 225 � 3200 MHz to significantly enhance airborne and weapon tactical communication systems capabilities.

DESCRIPTION: Airborne and weapon data links require more range in order to meet the Navy's demand to operate data links a greater distances. Most of the current airborne and weapon data link systems consists of multiple narrow frequency banded RF power amplifiers that greatly reduce mission planning flexibility. Additionally, a large operational logistics support base is needed to maintain the inventory. A small volume, lightweight power amplifier with greater output power is need to reduce the size of tactical and missile data links. Recent advances in III-V RF power technologies, particularly gallium nitride (GaN) may provide technically feasible and low cost solutions for low-to-high RF power generation approaches using relatively straightforward applications of prior art RF combiner technologies or other innovative RF power amplifier architectural concepts. Solutions should include novel small form factor packaging concepts that shall not exceed 250mm total in the x-y axis and 12 mm in the z-axis (

2 cubic inches) and be able to demonstrate high efficiency (>35%), low cost, good thermal management (Tj-c < 1�C/W), and proven reliability.

PHASE I: Determine the feasibility of developing broadband GaN-based RF power discrete or microwave monolithic integrated circuit (MMIC) and demonstrate proofs-of-concept utilizing computer simulations and/or experimental results.

PHASE II: Develop and demonstrate the capability of the power amplifier architecture in a laboratory environment.

PHASE III: Demonstrate the power amplifier in an aircraft, weapon, or Unmanned Aerial Vehicle (UAV) data link platform.

PRIVATE SECTOR COMMERCIAL POTENTIAL/DUAL-USE APPLICATIONS: Successful design and implementation of broadband GaN-based RF power technology provides a potential for a new generation of low-to-high RF power amplifiers with smaller form factor, lower weight, and higher reliability.

REFERENCES:
1. Palmour, J.W.; Sheppard, S.T.; Smith, R.P.; Allen, S.T.; Pribble, W.L.; Smith, T.J.; Ring, Z.; Sumakeris, J.J.; Saxler, A.W.; Milligan, J.W.;"Wide bandgap semiconductor devices and MMICs for RF power applications"; Electron Devices Meeting, 2001. IEDM Technical Digest. International, 2-5 Dec. 2001, Page(s):17.4.1 - 17.4.4
2. Vellas, N.; Gaquiere, C.; Guhel, Y.; Werquin, M.; Bue, F.; Aubry, R.; Delage, S.; Semond, F.; De Jaeger, J.C.;"High linearity performances of GaN HEMT devices on silicon substrate at 4 GHz", Electron Device Letters, IEEE Volume 23, Issue 8, Aug. 2002, Page(s):461 - 463

KEYWORDS: Microwave Monolithic Integrated Circuit (MMIC); Amplifier; Thermal Management; Data Link; Radio Frequency; Tactical Communication Systems

TPOC: (301)342-9094
2nd TPOC: (301)342-9135

** TOPIC AUTHOR (TPOC) **

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