L-Band Solid-State High Power Amplifier for Airborne Platforms
Navy SBIR 2006.2 - Topic N06-125 NAVAIR - Mrs. Janet McGovern - [email protected] Opens: June 14, 2006 - Closes: July 14, 2006 N06-125 TITLE: L-Band Solid-State High Power Amplifier for Airborne Platforms TECHNOLOGY AREAS: Air Platform, Sensors, Electronics ACQUISITION PROGRAM: PMA 231 E2D Advanced Hawkeye ACAT I OBJECTIVE: Develop a lightweight and small volume L-band solid-state power amplifier for aircraft platforms. DESCRIPTION: Navy aircraft must be equipped with communication networking systems to meet the growing demand of exchanging large volumes of information between multiple users. However, space is limited on aircraft, consequently there is a need to reduce the volume and weight of current communication equipment on-board aircraft. The E2C/D communication system currently utilizes a JTIDS vacuum tube based high power amplifier that occupies a significant volume, footprint, and weight in the aircraft. Current dimensions of the high power amplifier are 7.68" h x 15.52" w x 21.00"l for a volume of 1.45 cu. ft. The high power amplifier weighs 83.7 lbs. [3] There is a strong desire to develop innovative solid-state high power amplifier architecture based on LDMOS, SiC, or GaN that is capable of outputting power of 1000 watts continuous-wave (cw) in the L-band [1,2]. The amplifier architecture should demonstrate a significantly smaller volume, smaller footprint, and lower weight than the E2C/D JTIDS high power amplifier while meeting the JTIDS electrical and mechanical requirements. Thermal management and packaging issues should be addressed. The power amplifier architecture is expected to consist of a pre-driver stage and a high power stage. PHASE I: Develop a computer model, analytic model or breadboard to validate the design for the high power amplifier architecture to achieve the performance requirements. PHASE II: Demonstrate the capability of the power amplifier architecture to meet the operational requirements in a laboratory environment. Develop the design concepts for packaging the power amplifier architecture in a reduced volume, reduced footprint, and lower weight. PHASE III: Demonstrate the power amplifier architecture in a reduced volume, reduced footprint, and lower weight. Demonstrate the amplifier in an E2D electrical and mechanical environment. Transitions power amplifier technology to naval aircraft platform. PRIVATE SECTOR COMMERCIAL POTENTIAL/DUAL-USE APPLICATIONS: New highly efficient linear amplifiers will support all spectrums of communications, from radios to cell phones to wireless networks. The RF power amplifier has the largest impact on the cost, size, weight and power for communication systems. A small volume low weight high power amplifier will be benificial for wired and wireless communication systems in the cell phone and networking industries. REFERENCES: 2. Chen, P.; Chang, H.R.; Li, X.; Luo, B.; "Design and Fabrication of SiC MESFET Transistor and Broadband Power Amplifier for RF Applications", Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on, 24-27 May 2004 Page(s):317 - 318. 3. Interface Control Document High Power Amplifier for JTIDS Class 2H Terminal Configuration Y207A115; will be posted on SITIS KEYWORDS: Power Amplifier; Solid State; Communication System; Thermal Management; Airborne; Efficiency TPOC: (301) 342-9094
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