TECHNOLOGY AREAS: Sensors

ACQUISITION PROGRAM: NA, IWS 2.0 will transition technology into developing Radar and EW systems

RESTRICTION ON PERFORMANCE BY FOREIGN CITIZENS (i.e., those holding non-U.S. Passports): This topic is "ITAR Restricted." The information and materials provided pursuant to or resulting from this topic are restricted under the International Traffic in Arms Regulations (ITAR), 22 CFR Parts 120 - 130, which control the export of defense-related material and services, including the export of sensitive technical data. Foreign Citizens may perform work under an award resulting from this topic only if they hold the "Permanent Resident Card", or are designated as "Protected Individuals" as defined by 8 U.S.C. 1324b(a)(3). If a proposal for this topic contains participation by a foreign citizen who is not in one of the above two categories, the proposal will be rejected.

OBJECTIVE: Demonstrate innovative cost effective packaging for high power Gallium Nitride(GaN) Power Amplifiers (PAs.) for Navy Shipboard Radars and Electronic Warfare (EW) Systems.

DESCRIPTION: Gallium nitride power amplifiers have demonstrated state-of-the-art performance levels with respect to devices currently used in most Department of Defense (DoD) systems.1 In particular, the relatively higher power and efficiency levels achieved with GaN PAs can be used to enable significant improvements in radar system range, weight, cooling, and cost. The reliability of GaN devices has also been established through the Defense Advanced Research Project Agency (DARPA) Wide Bandgap Semiconductor (WBGS) program.2

System insertion of GaN PAs still faces challenges related to affordable high performance packaging of GaN PAs. In particular cost effective thermal management is a key challenge for GaN PAs due to their relatively high RF power density and its corresponding high power dissipation density. To this end, solutions are sought with respect to the cost effective packaging of GaN PAs. Examples of representative solutions include (1) the development of high thermal conductivity PA heat spreaders and package base materials that address issues of mechanical damage and piezoelectric effects associated with coefficient of thermal expansion match differences between spreaders and GaN devices, plating compatibility with production eutectic solder process, and cost effectiveness. Heat spreaders should have a thermal conductivity greater than 250 W/mK that are compatible with AuSn or similar eutectic solder processes and that possess a coefficient of thermal expansion that matches silicon carbide. (2) The development of relatively high thermal conductivity solders and epoxies appropriate for attachment of GaN PAs to thermal spreaders or for attachment of transmit/receive modules to phased array cold plates. These thermally conductive interface materials shall have a thermal conductivity in excess of 25 W/mK, they shall be reworkable and suitable for low cost manufacturing processes and they shall also be able to satisfy the power dissipation levels anticipated during GaN PA operation without degradation. Finally, (3) development of affordable Transmit/Receive (T/R) module packaging technologies that provide a relative cost reduction are also sought. The technologies developed shall provide reliable life cycle operation of GaN T/R modules and reduce cost by 50%.

PHASE I: Demonstrate feasibility of proposed packaging and/or thermal management technology through modeling and empirical evaluations. Technical feasibility shall be demonstrated by meeting the stated performance objectives and demonstrating transition potential.

PHASE II: Develop and demonstrate a solid-state prototype PA module that 1) addresses the electrical, mechanical and thermal objectives of the topic, 2) that is compatible with high power operational shipboard solid state radars, and 3) will satisfy reliable long-term operation within an operational shipboard solid state radar.

PHASE III: Refine the phase II design as necessary and incorporate into a solid-state high-power amplifier module design intended for integration and demonstration in an operating IWS 2.0 radar system.

PRIVATE SECTOR COMMERCIAL POTENTIAL/DUAL-USE APPLICATIONS: The developed high power PA modules will have technological applicability for all commercial and military avionics radars, all commercial radar applications, and all marine radar applications.

REFERENCES:
1. www.cree.com/products/wireless_gan_hemt4.asp

2. http://www.darpa.mil/mto/programs/wbgsrf/index.html

3. Progress in GaN Performances and Reliability Saunier, P.; Lee, C.; Balistreri, A.; Dumka, D.; Jimenez, J.; Tserng, H. Q.; Kao, M.Y.; Chao, P.C.; Chu, K.; Souzis, A.; Eliashevich, I.; Guo, S.; del Alamo, J.; Joh, J.; Shur, M.; Device Research Conference, 2007 65th Annual, 18-20 June 2007, Page(s):35 - 36.

4. http://www.cree.com/products/wireless_gan_hemt3.asp

KEYWORDS: Power Amplifier, Transmit/ Receive, GaN, Thermal Management, Radar, EW

** TOPIC AUTHOR (TPOC) **

DoD Notice:   Between November 10 and December 12, 2010, you may talk directly with the Topic Authors to ask technical questions about the topics. Their contact information is listed above. For reasons of competitive fairness, direct communication between proposers and topic authors is not allowed starting December 13, 2011, when DoD begins accepting proposals for this solicitation.

However, proposers may still submit written questions about solicitation topics through the DoD's SBIR/STTR Interactive Topic Information System (SITIS), in which the questioner and respondent remain anonymous and all questions and answers are posted electronically for general viewing until the solicitation closes. All proposers are advised to monitor SITIS (11.1 Q&A) during the solicitation period for questions and answers, and other significant information, relevant to the SBIR 11.1 topic under which they are proposing.

If you have general questions about DoD SBIR program, please contact the DoD SBIR Help Desk at (866) 724-7457 or email weblink.