High Power Microwave Limiters based on GaN Technology Navy SBIR FY2004.2 Sol No.: Navy SBIR FY2004.2 Topic No.: N04-162 Topic Title: High Power Microwave Limiters based on GaN Technology Proposal No.: N042-162-0 Firm: Sensor Electronic Technology, Inc. 1195 Atlas Road Columbia, South Carolina 29209 Contact: Thomas Katona Phone: (803) 647-9757 Web Site: www.s-et.com Abstract: We propose to develop power limiter based on Schottky diodes over AlGaN/GaN structure. The limiters would have the capability to integrate with AlGaN/GaN transistors, which is a good candidate for next-generation power amplifiers. The microwave noise behavior of GaN-based transistors is also similar to the best GaAs transistors. Thus, the power limiters together with GaN-based LNA will serve as a robust receiver which can be put close to the high-power amplifiers. GaN material systems have been under intense investigation in the last ten years due to its high breakdown field and high temperature operation. GaN transistors operating up to 600C is available in reports from various researchers. The devices and circuits will prove their potential for modern military demand of high power microwave limiters. Benefits: With the advancement of microwave power amplifier technology, it could be foreseen that power amplifiers with a few times higher power will be deployed in military radar systems. In T/R module, the receiver, which will definitely be exposed to this higher microwave power, thus, requires a better survivability under the rough environment. On the other hand, future applications of microwave receivers will include such situations such as electronic warfare and huge radiation conditions. All these demands call for a better protection of the receiver from large microwave powers. Return