Development of Large Bulk Silicon Carbide Substrates From Halogenated Precursors Navy SBIR FY2004.2 Sol No.: Navy SBIR FY2004.2 Topic No.: N04-177 Topic Title: Development of Large Bulk Silicon Carbide Substrates From Halogenated Precursors Proposal No.: N042-177-0 Firm: INTRINSIC Semiconductor Corporation 22660 Executive Drive Suite 101 Sterling, Virginia 20166 Contact: Cem Basceri Phone: (703) 437-4000 Web Site: www.intrinsicsemi.com Abstract: INTRINSIC proposes bulk SiC single crystal growth via halogenated precursors for growing ultrahigh quality SiC materials. This is a unique approach which will provide benchmark SiC substrates in WBG technology. The technical objective of the Phase I program is to demonstrate the growth of ultra-high quality SiC crystals at relatively lower temperatures than the mainstream PVT growth technique by using the halogenated gas sources for Si and C. With the proposed approach, the state of the art semiconductor process controls will be utilized for the SiC bulk growth which are not available in mainstream PVT technology today. Due to the high purity of the gases used and the improved precursor controls, it is possible to grow very high purity SiC and control defect formation. This approach will be capable of producing doped SiC crystal of different polytypes, both n-type and p-type conductivity, as well as insulating which are necessary properties for high-frequency and high-power applications. Benefits: Benefits: - production of ultrahigh quality SiC substrates - improved process controls and robust manufacturing - benchmark substrates Commercial Applications: - High-frequency and high-power devices, high-temperature applications Return