High-Efficiency GaN HEMT SSPAs for S-band Radar
Navy SBIR FY2008.2

Sol No.: Navy SBIR FY2008.2
Topic No.: N08-172
Topic Title: High-Efficiency GaN HEMT SSPAs for S-band Radar
Proposal No.: N082-172-0957
Firm: Nitronex Corporation
2305 Presidential Drive
Durham, North Carolina 27703
Contact: Thomas Winslow
Phone: (919) 424-5189
Web Site: www.nitronex.com
Abstract: S and X-band radars are central to the Air and Missile defense capability of the US ballistic missile defense (BMD) systems. The objective of this Phase I program is to investigate various PA classes of operation and identify approaches with significantly improved efficiency. The strategy proposed in this SBIR Phase I proposal is to combine the benefits of high efficiency switching architectures with the power and bandwidth capability offered by GaN HEMTs. High efficiencies are possible through use of PA classes such as D, E or F that operate the transistor as a switch. Such approaches offer significant promise for high efficiency RF transmitters provided fundamental efforts are expended to overcome the technical challenges in the input and output matching designs posed in such approaches.
Benefits: High efficiency GaN HEMT PA designs will lead to (a) increase reliability of RF transmitter through reduced device operating temperature (b) significantly reduced cooling power of the radar (c) increased system lifetime and reliability through simplification (d) reduced size, weight and volume through use of high power density GaN (e)increased range of the radar (f) reduced manufacturing and operating costs.