High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates for Power Switching Applications Navy SBIR FY2012.2 Sol No.: Navy SBIR FY2012.2 Topic No.: N122-135 Topic Title: High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates for Power Switching Applications Proposal No.: N122-135-0058 Firm: Avogy, Inc. 677 River Oaks Pkwy San Jose, California 95134-1907 Contact: Don Disney Phone: (408) 684-5223 Abstract: Avogy has a unique approach to producing vertical GaN-on-GaN power devices that have fundamental advantages over silicon, silicon carbide, and lateral GaN devices. With this SBIR funding, we will demonstrate the feasibility of a normally-off vertical GaN transistor with a blocking voltage over 5000V, a threshold voltage greater than 1V, and specific on-resistance less than 30 mohm-cm2. Benefits: 3300V and 5000V vertical GaN-on-GaN power devices can serve the commercial wind power, smart-grid, ship-propulsion, and high-speed rail markets. These devices will also be well-suited for military and space applications. Return