High Efficiency 808 nm Laser Pump Diode Arrays with Excellent Beam Quality Navy SBIR FY2012.2 Sol No.: Navy SBIR FY2012.2 Topic No.: N122-112 Topic Title: High Efficiency 808 nm Laser Pump Diode Arrays with Excellent Beam Quality Proposal No.: N122-112-0734 Firm: Laser Operations, LLC 15632 Roxford St. Sylmar, California 91342-1265 Contact: Jeffrey Ungar Phone: (818) 986-0000 Web Site: http://www.qpclasers.com Abstract: As part of an effort funded by HEL-JTO, we recently demonstrated advanced quantum well diode laser designs with enhanced confinement operating at 1500 nm that substantially advanced the state-of-the-art with regard to efficiency, high operating temperature and beam quality. Similar enhanced confinement designs will be implemented at 808 nm to greatly improve both electrical-to-optical efficiency and fiber-coupling efficiency. Moreover, by incorporating monolithic internal diffraction gratings in these lasers, linewidths and wavelength tolerances can be reduced by roughly a factor of 4 compared to standard pump diodes without incurring the cost and complication of external volume bragg grating stabilizers. Benefits: Diode pumps in the 800 and 900 nm band are key components of high power solid-state lasers such as slab, disk and fiber lasers. Improved electrical-to-optical and beam quality/coupling efficiency will result in both military directed energy lasers and industrial lasers with reduced power and cooling requirements, and will greatly reduce the size and weight of the laser and both the power supply and cooling systems. Return