Millimeter Thick, Periodically Oscillating Polarity GaN Grown via HVPE
Navy SBIR FY2013.1

Sol No.: Navy SBIR FY2013.1
Topic No.: N131-068
Topic Title: Millimeter Thick, Periodically Oscillating Polarity GaN Grown via HVPE
Proposal No.: N131-068-0564
Firm: Kyma Technologies, Inc.
8829 Midway West Road
Raleigh, North Carolina 27617-4606
Contact: Edward Preble
Phone: (919) 789-8880
Web Site:
Abstract: Gallium Nitride (GaN) crystals have recently garnered attention as a candidate for use as a Quasi-Phase Matching (QPM) material for frequency conversion applications such as second harmonic generation (SHG) and optical parametric oscillation (OPO), due to its wide bandgap (3.4eV), high thermal conductivity (220-260 W/m-k), and wide transparency window (0.36-7um). Additionally, recent work has also demonstrated the ability to produce Periodically Oscillating Polarity GaN (POP-GaN) via several techniques. Such periodically poled structures have been used for QPM in other material systems, such as Lithium Niobate, Potassium Titanyl Phosphate, and GaAs, so the demonstration of periodic poling capability in GaN leads to optimism in utilizing GaN for QPM applications. Growth of large area, thick POP-GaN crystals with an embedded periodic polarity structure present several challenges, which if solved, will provide a commercialization route for POP-GaN as a QPM material with higher performance and wavelength range capability than the existing materials in the market today.
Benefits: Periodically Poled Gallium Nitride, if successfully utilized in Quasi-Phase Matched frequency conversion would allow higher power density lasers, higher laser damage thresholds, and the ability to use standard 1um pump lasers that are not currently viable to competitive GaAs devices.