W-band GaN IMPATT Devices Navy SBIR FY2015.2 Sol No.: Navy SBIR FY2015.2 Topic No.: N152-114 Topic Title: W-band GaN IMPATT Devices Proposal No.: N152-114-0033 Firm: QuinStar Technology, Inc. 24085 Garnier Street Torrance, California 90505 Contact: John Kuno Phone: (310) 320-1111 Abstract: QuinStar Technology, Inc. proposes to develop a GaN IMPATT (IMPact-ionization Avalanche Transit Time) device operating at W-band for power generation applications. The approach is based on advanced material development of low defect GaN vertical structures, comprehensive device modeling and optimization, and state-of-the-art fabrication and packaging techniques, supported by a strong team and commercialization strategy. Benefits: Navy: EW and radar (seeker) applications such as NEMESIS, AARGM programs; Other DoD: Tube replacement and legacy transmitter element replacement such as MILSTAR SATCOM applications; Commercial/Industrial: NASA remote sensing sources for MMW and THz frequencies, NASA MMW deep space communications, weather/security/surveillance radars, THz noise sources. Return