Advanced Solid State Switch (Diode) Materials for High Rep Rate Pulse Power Systems and High Power Radio Frequency (HPRF) Applications Navy STTR FY2015.A Sol No.: Navy STTR FY2015.A Topic No.: N15A-T023 Topic Title: Advanced Solid State Switch (Diode) Materials for High Rep Rate Pulse Power Systems and High Power Radio Frequency (HPRF) Applications Proposal No.: N15A-023-0146 Firm: Applied Physical Electronics, L.C. PO Box 341149 Austin, Texas 78734 Contact: William Nunnally Phone: (512) 264-1804 Web Site: www.apelc.com Abstract: Direct conversion of DC energy to RF energy via switched systems such as Class D, E, and F amplifiers is limited by the switches currently available. Presently available switches are voltage limited, resistive transition time limited, and rate of current rise limited. Furthermore, high power switched amplifiers are limited by the thermal dissipation of the switches which are required to open and close in a fraction of the period of the RF being generated. Applied Physical Electronics, in concert with Washington State University, are developing a Silicon Carbide switch capable of operating at tens of kV and transitioning from blocking to conduction in several ns to provide very high rates of current rise. Benefits: The development of a high voltage, fast transition semiconductor (SiC) switch benefits nearly all systems in which generate RF as well as the common switching power supply. Reducing the resistive transition time reduces switch dissipation which further increases the efficiency of these systems. In addition, a smaller transition time enables switching power supplies to operate at higher switching frequencies which reduces the size and weight of the transformers. Furthermore, reducing the switch dissipation reduces the size of the thermal management system per unit power output. Return