N112-167 TITLE: Compact, Efficient, High Power Semiconductor Laser for Undersea Communication

TECHNOLOGY AREAS: Electronics

OBJECTIVE: Develop and demonstrate compact, efficient, high power semiconductor laser for undersea communication.

DESCRIPTION: High data rate communication between mobile platforms above and below water are typically limited to the blue-green visible frequency spectrum as other frequencies of electromagnetic energy have very limited propagation. Laser communication systems operating in this spectrum have the potential to transmit at very high data rates to submarines at speed and depth. Power and wavelength requirements for these laser systems have precluded the use of semiconductor lasers despite their intrinsic advantages in speed, size and efficiency. However, the emergence of wide bandgap Gallium Nitride-based semiconductor lasers, particularly in the non-polar crystal orientations, offers the potential for a semiconductor laser solution with improved power, efficiency and size in the green wavelengths. Developing this technology for high power devices will lead to low size, weight, and power consumption that will improve power conversion efficiency particularly on mobile platforms. The existing technology for green lasers typically involves second or third harmonic generation from a longer wavelength laser source with added complexity and efficiency limited by the harmonic generation process. The goal of this program is to develop semiconductor lasers that are capable of delivering >1W of power at 518nm with an efficiency of over 5%.

PHASE I: Demonstrate a design for a semiconductor laser capable of meeting the specified device goals. Design should show potential improvements in state-of-the-art output power, wall-plug efficiency at a wavelength of 518nm. Designs should be potentially application to other wavelengths in the blue-green spectrum. Establish feasibility of the proposed concept by modeling and bench-top demonstration of key components. The phase I deliverable will be a final report including the initial system design and performance assessment.

PHASE II: Develop, test and deliver a prototype semiconductor laser operating at 518nm with >1W output power at 5% efficiency in a packaged format of the proposer's designation. The laser should be delivered in a complete packaging solution with appropriate consideration of thermal management requirements.

PHASE III: Commercialize high power semiconductor laser diode developed on the program and develop full manufacturing process working with system integrators to meet military needs including packaging format requirements. The technology developed under this effort will be transitioned for military application to undersea communications efforts.

PRIVATE SECTOR COMMERCIAL POTENTIAL/DUAL-USE APPLICATIONS: The private sector industry will benefit from this program as it provides a jump start toward higher power semiconductor lasers in the green wavelengths. These lasers are of great commercial interest as they are a critical component to projection display applications. A green semiconductor laser source would enable wide adoption of projection displays in conventional formats down to emerging "pico-projectors."

REFERENCES:
(1) IEEE Photonics Technology Letters, Vol. 19, no. 17, p. 1328, (2007).

(2) Applied Physics Letters, Vol. 95, no. 7, 071103, (2009).

KEYWORDS: semiconductor laser; gallium nitride; undersea; communications;

** TOPIC AUTHOR (TPOC) **

DoD Notice:   Between April 26 and May 25, 2011, you may talk directly with the Topic Authors to ask technical questions about the topics. Their contact information is listed above. For reasons of competitive fairness, direct communication between proposers and topic authors is not allowed starting May 26, 2011, when DoD begins accepting proposals for this solicitation.

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